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	Manufacture of semiconductor laser
	OKANO ESEKO
	1989-10-13
著作权人	NEC CORP
专利号	JP1989257384A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To facilitate maintenance of the shape of a diffraction lattice without thermal deterioration by a method wherein the diffraction lattice is formed by interference exposure and filled with a guide layer. CONSTITUTION:After a layer 2 which has a band gap not larger than the band gap of a guide layer 4 formed on it and smaller than the band gap of InP is built up on an InP substrate 1, trenches which reach the inside of the InP substrate from the layer 2 are formed to provide a diffraction lattice and, successively, the trenches are filled with an InGaAsP guide layer 4. As a result, liquid growth is carried out while the diffraction lattice surface is protected by quaternary layers 5, 6 and 7. Therefore, the extinction of the diffraction lattice caused by maintaining a high temperature during liquid epitaxy is avoided, so that an excellent distributed feedback type semiconductor laser can be manufactured by maintaining the neatly arranged diffraction lattice. Thus, even if the diffraction lattice is kept in the high temperature of liquid epitaxy, its shape is not extinguished by thermal deterioration.
公开日期	1989-10-13
申请日期	1988-04-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89198]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	OKANO ESEKO. Manufacture of semiconductor laser. JP1989257384A. 1989-10-13.

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