Semiconductor laser element and manufacture thereof | |
SHINOZAKI KEISUKE; KAWAHARA MASATO; WATANABE AKIRA; FURUKAWA RYOZO | |
1987-07-14 | |
著作权人 | OKI ELECTRIC IND CO LTD |
专利号 | JP1987158384A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser element and manufacture thereof |
英文摘要 | PURPOSE:To obtain an internal stripe type semiconductor laser element with a current constriction channel section in uniform channel width by mutually forming the oppositely faced side surfaces of the current constriction channel section in parallel to a vertical shape to a foundation surface. CONSTITUTION:An N-type AlxGa1-xAs first clad layer 33, a P-type AlyGa1-yAs active layer 35, a P-type AlxGa1-xAs second clad lower layer 39 and an N-type GaAs layer 40 are shaped onto a substrate 31 in succession through a liquid- phase growth method, etc. A groove 40a, which has internal surfaces, which mutually run parallel and are vertical to a foundation surface, and is etched to a striped shape in predetermined width, is formed so that the N-type GaAs layer 40 is left in prescribed thickness t0 from the surface of the N-type GaAs layer 40 through RIE, etc. The groove 40a is spread up to the second clad lower layer 39 by an unsaturated GaAs melt-back melting liquid, and a residual section in the semiconductor layer 40 functions as a current constriction layer 4 A P-type AlxGa1-xAs is grown and a current constriction channel section 43a and a second clad upper layer 43b are shaped, a P-type GaAs cap layer 45 is formed, and an N side electrode 47 and a P side electrode 49 are shaped. |
公开日期 | 1987-07-14 |
申请日期 | 1986-01-06 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/89187] |
专题 | 半导体激光器专利数据库 |
作者单位 | OKI ELECTRIC IND CO LTD |
推荐引用方式 GB/T 7714 | SHINOZAKI KEISUKE,KAWAHARA MASATO,WATANABE AKIRA,et al. Semiconductor laser element and manufacture thereof. JP1987158384A. 1987-07-14. |
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