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	Semiconductor laser element and manufacture thereof
	YANASE TOMOO
	1986-05-30
著作权人	NEC CORP
专利号	JP1986112393A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element and manufacture thereof
英文摘要	PURPOSE:To provide a semiconductor laser, which has excellent characteristics and is suitable for mass production, by using an organic-metal chemical vapor deposition method (MO-CVD), and epitaxially growing a crystalline laminated body including a double heterostructure, in which an active layer for laser oscillation is held by upper and lower parts, in a substrate having a V shaped groove. CONSTITUTION:On a P type GaAs substrate 11, a P type GaAs buffer layer 12 and an N type GaAs current narrowing layer 13 is formed. The first crystalline laminated body is formed by both layers. Then, a V shaped groove is etched. On this body, the second crystalline laminated body, which comprises a P-AlGaAs clad layer 14, an N-AlGaAs active layer 15, an N-AlGaAs clad layer 17 and a contact layer 18, is formed. In the epitaxial growth of the first and second crystalline laminated bodies, an MO-CVD method, which is suitable for mass production, is used. Therefore, a semiconductor laser, which is oscillated in a stable, single lateral mode by a small current, can be obtained.
公开日期	1986-05-30
申请日期	1984-11-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89171]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	YANASE TOMOO. Semiconductor laser element and manufacture thereof. JP1986112393A. 1986-05-30.

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