Semiconductor device | |
MAMINE TAKAYOSHI; ODA TATSUJI; IMAI TOSHIHIRO | |
1987-06-20 | |
著作权人 | SONY CORP |
专利号 | JP1987137892A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor device |
英文摘要 | PURPOSE:To obtain a semiconductor device which is long-lived and has uniform characteristics by forming a non-current injection region by ion-implanting one of He, Be, Li and B in the semiconductor. CONSTITUTION:The formation of a non-current region for a semiconductor, such as a GaAs compound semiconductor, is formed by ion-implanting at least one kind out of the following specified light elements other than without using protons: helium He, beryllium Be, lithium Li and boron B: When this forming technigue applies to a gain guide type semiconductor laser of a stripe structure, an N-type AlxGa1-xAs first clad layer 2 and a P-type or N-type AlyGa1-yAs active layer, for example, and moreover, a P-type AlxGa10xAs second clad layer 4 and a P low-resistivity cap layer 5 are epitaxially grown in order on an N-type GaAs substrate 1 and the active layer and thereafter, a metal masking layer or a mask 20 of wire or so on to be extended in one direction is arranged on the cap layer 5 and boron B is implanted with a specific accelerating energy in such a depth that it intrudes from a top of the cap layer 5 into part of the thickness of the second clad layer 4. |
公开日期 | 1987-06-20 |
申请日期 | 1985-12-12 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/89149] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SONY CORP |
推荐引用方式 GB/T 7714 | MAMINE TAKAYOSHI,ODA TATSUJI,IMAI TOSHIHIRO. Semiconductor device. JP1987137892A. 1987-06-20. |
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