| Semiconductor light-emission device | |
| TAKANO SHINJI | |
| 1992-09-14 | |
| 著作权人 | NEC CORP |
| 专利号 | JP1992258190A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emission device |
| 英文摘要 | PURPOSE:To realize higher output and higher efficiency of a semiconductor laser with suppressed leak current by a method wherein a low conductivity ratio semiconductor layer is formed on a current strangulation layer. CONSTITUTION:A V-shaped groove is formed with etching liquid consisting of a solution of hydrochloric acid and phosphoric acid. The width of the groove is approx. 5mum an the depth is approx. 2mum. After that, a p-In clad layer 50, an undoped InGaAs active layer 60, an n-InP layer 70, and an n-InGaAa contact layer 80 are grown. This semiconductor laser wafer is cleaved to a length for a 800mum resonator to obtain a semiconductor laser. |
| 公开日期 | 1992-09-14 |
| 申请日期 | 1991-02-13 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89067]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | TAKANO SHINJI. Semiconductor light-emission device. JP1992258190A. 1992-09-14. |
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