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	Semiconductor laser element
	HAYAKAWA TOSHIRO; MIYAUCHI NOBUYUKI
	1987-10-28
著作权人	SHARP CORP
专利号	JP1987247584A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To form a semiconductor laser of long operation lifetime whose noise characteristic is restrained at low level by epitaxially growing a P-type layer in advance by use of a P-type substrate as a substrate for the crystal growth to make a P-type cladding layer as an underlying layer of an active layer and using Mg as an impurity in the active layer and specifying its concentration. CONSTITUTION:On a current constriction layer 2 and a V-groove formed on a P-type GaAs substrate 1, a P-type cladding layer 3 consisting of Ga0.45Al0.55As doped with Mg of 10 cm as a p-type impurity, a flat-form P-type active layer 4 consisting of Ga0.85Al0.15 As doped with Mg of 10cm, an N-type cladding layer 5 consisting of Ga0.45Al0.55As doped with Te of 10cm, and an N-type cap layer 6 consisting of GaAs doped with Te of 10cm are laminated in order by continuous liquid-phase epitaxial growth. As the current constriction layer 2 makes a junction to be of a conductivity type opposite to an injected current, a current does not flow in this part and a current path 7 is composed in which the current concentrates in the V-groove part where the current constriction layer 2 is removed.
公开日期	1987-10-28
申请日期	1987-04-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89006]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	HAYAKAWA TOSHIRO,MIYAUCHI NOBUYUKI. Semiconductor laser element. JP1987247584A. 1987-10-28.

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