| Semiconductor laser | |
| HORIE, HIDEYOSHI | |
| 2004-04-01 | |
| 著作权人 | MITSUBISHI CHEMICAL CORPORATION |
| 专利号 | WO2004027950A1 |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A semiconductor laser of oscillation wavelength ≶r (nm) comprises at least a substrate, a clad layer of first conductivity type having an average index of refraction N1cld, an active layer structure having an average index of refraction NA, and a clad layer of second conductivity type having an average index of refraction N2cld. The semiconductor laser is characterized in that a sub waveguide layer of the first conductivity type having an average index of refraction N1swg is formed between the substrate and the clad layer of the first conductivity type, a low-index of refraction layer of the first conductivity type having an average index of refraction N1LIL is formed between the sub waveguide layer and the substrate, and these indexes satisfy a specific relation. The semiconductor layer has an oscillation wavelength stable to variations in current, light output, and temperature. |
| 公开日期 | 2004-04-01 |
| 申请日期 | 2003-09-09 |
| 状态 | 未确认 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88950]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CHEMICAL CORPORATION |
| 推荐引用方式 GB/T 7714 | HORIE, HIDEYOSHI. Semiconductor laser. WO2004027950A1. 2004-04-01. |
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