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	Semiconductor laser device
	SHIBUYA TAKAO; ITO KUNIO
	1987-02-24
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1987042591A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To suppress multiplication of crystal defects and avoid deterioration of a laser and at the same time improve reliability in the high temperature operation by a method wherein not only an impurity which contributes to electric conduction but also an impurity which does not contribute to electric conduction is contained in an active layer which composes a semiconductor laser device. CONSTITUTION:An N-type GaAs blocing layer 2, the first P-type Al0.5Ga0.5As cladding layer 3, a nondoped Al0.1Ga0.9As active layer 4 and the second N-type Al0.5Ga0.5As cladding layer 5 are made to grow on a P-type GaAs substrate 1 by liquid phase epitaxial growth and the whole surface is covered with an N-type GaAs contact layer 6 to compose a semiconductor laser. In this constitution, although the active layer 4 is the nondoped Al0.1Ga0.9As layer, Cu, which has no contribution to electric conduction, is contained in the layer 4 with the concentration of 2X10/cm. This non-contributing element may be Fe, Ca or the like other than Cu. With this constitution, internal multiplication of crystal defects are minimized and the reliability, especially in high temperature operation, can be improved.
公开日期	1987-02-24
申请日期	1985-08-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88907]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	SHIBUYA TAKAO,ITO KUNIO. Semiconductor laser device. JP1987042591A. 1987-02-24.

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