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	Semiconductor laser
	YAMAMOTO SUNAO; IKEDA MASAO
	1989-07-11
著作权人	ソニー株式会社
专利号	JP1989175290A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To suppress abnormal diffusion to the active layer of impurities and prevent the deterioration in the quality of the active layer, by setting impurity concentration in a current bottleneck layer to a specified value in a semiconductor laser where the current bottleneck layer is formed on one of the clad layers in a double hetero structure. CONSTITUTION:A buffer layer 2, an n-type clad layer 3, an active layer 4, a p-type clad layer 5, a cap layer 8, and an n-type GaAs layer are formed by epitaxial growth in order on a substrate Then, the center part of the n-type GaAs layer is removed selectively in the form of a stripe to form an n-type GaAs current bottleneck layer 1 After that, the p-type GaAs cap layer 8 is formed to obtain a semiconductor laser 12. Abnormal diffusion of a p-type impurity Zn from the clad layer 5 to the active layer 4 is suppressed by setting the impurity concentration of the n-type GaAs current bottleneck layer 11 to less than 2.0X10cm and the superior active layer 4 is maintained. Thus, the internal current bottleneck type high grade semiconductor laser exhibiting a good character is obtained.
公开日期	1989-07-11
申请日期	1987-12-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88774]
专题	半导体激光器专利数据库
作者单位	ソニー株式会社
推荐引用方式 GB/T 7714	YAMAMOTO SUNAO,IKEDA MASAO. Semiconductor laser. JP1989175290A. 1989-07-11.

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