Visible light semiconductor laser | |
MURAKAMI TAKASHI | |
1992-02-24 | |
著作权人 | 三菱電機株式会社 |
专利号 | JP1992056183A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Visible light semiconductor laser |
英文摘要 | PURPOSE:To prevent crystal defect from entering during current block layer growth and achieve a horizontal mode stabilization and a long life with a loss guide by using InxGa1-xAs1-yPy as a current block layer. CONSTITUTION:An n-In1-xGaxAs1-yPy current block layer 12 is selectively grown with an SiN film 11 as a mask. In this case, a typical growth temperature is 600 deg.C. When increasing temperature of a substrate where a ridge is formed to 600 deg.C, 300cc PH3 (hydrogen base 10% dilution) is shunted for enabling phosphor pressure to be applied to, thus preventing a crystal defect from entering an upper clad layer 4 and an activation layer 3. Namely, simultaneously with starting of growth, trimethyl indium, trimethyl gallium, AsH3, and PH3 which become materials, and H2Se or SiH4 which becomes an n-type dopant are allowed to flow and PH3 flow even during growth of the layer 12, thus enabling phosphor pressure to be applied to, thus preventing phosphor from being evaporated from the layer 4 easily and crystal defect from entering easily. Also, phosphor pressure is applied to a layer 3, thus preventing crystal defect from entering easily. Thus, loss mode can be stabilized and laser life can be extended. |
公开日期 | 1992-02-24 |
申请日期 | 1990-06-21 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/88765] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | 三菱電機株式会社 |
推荐引用方式 GB/T 7714 | MURAKAMI TAKASHI. Visible light semiconductor laser. JP1992056183A. 1992-02-24. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论