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	Visible light semiconductor laser
	MURAKAMI TAKASHI
	1992-02-24
著作权人	三菱電機株式会社
专利号	JP1992056183A
国家	日本
文献子类	发明申请
其他题名	Visible light semiconductor laser
英文摘要	PURPOSE:To prevent crystal defect from entering during current block layer growth and achieve a horizontal mode stabilization and a long life with a loss guide by using InxGa1-xAs1-yPy as a current block layer. CONSTITUTION:An n-In1-xGaxAs1-yPy current block layer 12 is selectively grown with an SiN film 11 as a mask. In this case, a typical growth temperature is 600 deg.C. When increasing temperature of a substrate where a ridge is formed to 600 deg.C, 300cc PH3 (hydrogen base 10% dilution) is shunted for enabling phosphor pressure to be applied to, thus preventing a crystal defect from entering an upper clad layer 4 and an activation layer 3. Namely, simultaneously with starting of growth, trimethyl indium, trimethyl gallium, AsH3, and PH3 which become materials, and H2Se or SiH4 which becomes an n-type dopant are allowed to flow and PH3 flow even during growth of the layer 12, thus enabling phosphor pressure to be applied to, thus preventing phosphor from being evaporated from the layer 4 easily and crystal defect from entering easily. Also, phosphor pressure is applied to a layer 3, thus preventing crystal defect from entering easily. Thus, loss mode can be stabilized and laser life can be extended.
公开日期	1992-02-24
申请日期	1990-06-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88765]
专题	半导体激光器专利数据库
作者单位	三菱電機株式会社
推荐引用方式 GB/T 7714	MURAKAMI TAKASHI. Visible light semiconductor laser. JP1992056183A. 1992-02-24.

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