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	半導体レーザ素子
	坂根 千登勢; 瀧口 治久; 工藤 裕章; 菅原 聰
	1998-07-24
著作权人	シャープ株式会社
专利号	JP2806533B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ素子
英文摘要	PURPOSE:To prevent a diffraction grating from being corroded by a meltback operation and to surely obtain a single longitudinal mode by a method wherein a semiconductor compound is grown at high speed on the diffraction grating by using a solution in an oversaturated state. CONSTITUTION:A mixed crystal ratio of an In1-xGaxAsyP1-y diffraction grating formation layer 15 satisfies 0.68<=x<=1, 0.34<=y<=1 and y=2.04x-04; a mixed crystal ratio of an n-type AlzGa1-zAs channel formation layer 16 laminated on each side part on the layer 15 is set within a range of 0<=z<=0.5. Accordingly, when a stripe-shaped channel is formed down to the layer 15 in the central part of the layer 16, an oxide film is formed on the surface of the layer 16; when a clad layer 17 is grown by a liquid epitaxial method, a growth speed of a crystal which is grown on the layer 16 becomes slow when its growth is started. As a result, a solution of a crystal which is grown on the layer 15 easily becomes an oversaturated state; a growth speed of the crystal becomes fast. Thereby, diffraction gratings 15a, 16a on the layer 15 are not corroded by a meltback operation; a single longitudinal-mode oscillation can be obtained surely.
公开日期	1998-09-30
申请日期	1988-10-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88754]
专题	半导体激光器专利数据库
作者单位	シャープ株式会社
推荐引用方式 GB/T 7714	坂根 千登勢,瀧口 治久,工藤 裕章,等. 半導体レーザ素子. JP2806533B2. 1998-07-24.

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