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	Semiconductor laser element
	OTSUKA NAOTAKA
	1986-12-20
著作权人	SHARP CORP
专利号	JP1986290792A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To obtain an available internal current constriction type semiconductor laser element having excellent characteristics by forming a non-doped GaAs optical absorption layer having a large absorption coefficient between an N-type GaAs current constriction layer and a P-type GaAlAs clad layer. CONSTITUTION:A non-doped GaAs optical absorption layer 7 having a large absorption coefficient is shaped between an N-type GaAs current constriction layer 2 and a P-type GaAlAs clad layer 3. Consequently, beams generated in a P-type GaAlAs active layer 4 are more absorbed to the absorption layer 7 even when preparing a laser having a wavelength such as 870nm. As a result, an effective index difference is shaped even in the direction parallel with a P-N junction, thus preventing the increase of an astigmatic difference. Accordingly, an available internal current constriction type semiconductor laser element having excellent characteristics is acquired.
公开日期	1986-12-20
申请日期	1985-06-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88689]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	OTSUKA NAOTAKA. Semiconductor laser element. JP1986290792A. 1986-12-20.

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