Semiconductor laser element | |
OTSUKA NAOTAKA | |
1986-12-20 | |
著作权人 | SHARP CORP |
专利号 | JP1986290792A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser element |
英文摘要 | PURPOSE:To obtain an available internal current constriction type semiconductor laser element having excellent characteristics by forming a non-doped GaAs optical absorption layer having a large absorption coefficient between an N-type GaAs current constriction layer and a P-type GaAlAs clad layer. CONSTITUTION:A non-doped GaAs optical absorption layer 7 having a large absorption coefficient is shaped between an N-type GaAs current constriction layer 2 and a P-type GaAlAs clad layer 3. Consequently, beams generated in a P-type GaAlAs active layer 4 are more absorbed to the absorption layer 7 even when preparing a laser having a wavelength such as 870nm. As a result, an effective index difference is shaped even in the direction parallel with a P-N junction, thus preventing the increase of an astigmatic difference. Accordingly, an available internal current constriction type semiconductor laser element having excellent characteristics is acquired. |
公开日期 | 1986-12-20 |
申请日期 | 1985-06-18 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/88689] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP CORP |
推荐引用方式 GB/T 7714 | OTSUKA NAOTAKA. Semiconductor laser element. JP1986290792A. 1986-12-20. |
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