- | |
HIRAYAMA JUZO; KINOSHITA JUNICHI | |
1988-10-25 | |
著作权人 | TOKYO SHIBAURA ELECTRIC CO |
专利号 | JP1988053719B2 |
国家 | 日本 |
文献子类 | 授权发明 |
其他题名 | - |
英文摘要 | PURPOSE:To protect the GaInAsP final layer and to prevent an impurity from diffusing by growing an impurity-doped InP layer on the surface of the final layer. CONSTITUTION:An N type InP buffer layer 2, an undoped InxGa1-xAs1-yPy active layer 3, a P type InP clad layer 4, a P type InuGa1-uAs1-vPv cap layer 5, and P type InP protective layer 6 are sequentially grown in liquid phase on an N type InP substrate Then, the remaining melt 7 is removed, and the layer 6 is removed by etching. Then, AnZn electrode 9 is deposited through an insulating film 8 opened at the layer 5, an AuGe electrode 10 is deposited on the lower surface of the substrate 1 to form a laser element. When the impurity density of the layer 6 is formed equal to the layer 5, the impurity diffusion from the layer 5 to the layer 6 is prevented. |
公开日期 | 1988-10-25 |
申请日期 | 1983-12-26 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/88679] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | TOKYO SHIBAURA ELECTRIC CO |
推荐引用方式 GB/T 7714 | HIRAYAMA JUZO,KINOSHITA JUNICHI. -. JP1988053719B2. 1988-10-25. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论