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	HIRAYAMA JUZO; KINOSHITA JUNICHI
	1988-10-25
著作权人	TOKYO SHIBAURA ELECTRIC CO
专利号	JP1988053719B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To protect the GaInAsP final layer and to prevent an impurity from diffusing by growing an impurity-doped InP layer on the surface of the final layer. CONSTITUTION:An N type InP buffer layer 2, an undoped InxGa1-xAs1-yPy active layer 3, a P type InP clad layer 4, a P type InuGa1-uAs1-vPv cap layer 5, and P type InP protective layer 6 are sequentially grown in liquid phase on an N type InP substrate Then, the remaining melt 7 is removed, and the layer 6 is removed by etching. Then, AnZn electrode 9 is deposited through an insulating film 8 opened at the layer 5, an AuGe electrode 10 is deposited on the lower surface of the substrate 1 to form a laser element. When the impurity density of the layer 6 is formed equal to the layer 5, the impurity diffusion from the layer 5 to the layer 6 is prevented.
公开日期	1988-10-25
申请日期	1983-12-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88679]
专题	半导体激光器专利数据库
作者单位	TOKYO SHIBAURA ELECTRIC CO
推荐引用方式 GB/T 7714	HIRAYAMA JUZO,KINOSHITA JUNICHI. -. JP1988053719B2. 1988-10-25.

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