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	Manufacture of embedded semiconductor laser
	IIDA CHIKAHIRO
	1991-10-14
著作权人	ANDO ELECTRIC CO LTD
专利号	JP1991230590A
国家	日本
文献子类	发明申请
其他题名	Manufacture of embedded semiconductor laser
英文摘要	PURPOSE:To manufacture an embedded semiconductor laser by one time crystal growth by forming a current blocking layer on portions other than a current path including an active layer. CONSTITUTION:Strip-like first, second and third grooves 11, 12 and 13, respectively, are formed in a substrate 2 so as to be parallel to one another. A current blocking layer 3 is laminated except a portion between the first groove 11 and the third groove 13. A buffer layer 4 and an active layer 5 are sequentially laminated on the current blocking layer 3. further, a buffer layer 8 and an active layer 9 are sequentially laminated in the central second groove 12. A clad layer 6 is laminated over the whole surfaces of the active layers 5 and 9. The active layer 9 which becomes a light emitting region is formed in the central groove 12 among the three grooves. The two outside grooves 11 and 13 are formed to prevent the current blocking layer which is the first crystal growth layer from being laminated in the central groove 12. Further, the active layer 9 laminated in the central groove 12 is the light emitting region and, to operate in a stable single transverse mode, the width of the active layer 9, namely, the width of the central groove 12 is controlled within a range of some degree. Thus, a manufacture can be executed by one time crystal growth.
公开日期	1991-10-14
申请日期	1990-02-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88635]
专题	半导体激光器专利数据库
作者单位	ANDO ELECTRIC CO LTD
推荐引用方式 GB/T 7714	IIDA CHIKAHIRO. Manufacture of embedded semiconductor laser. JP1991230590A. 1991-10-14.

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