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	Refractive index waveguide type semiconductor laser device
	TETSU HIDEO
	1992-01-30
著作权人	VICTOR CO OF JAPAN LTD
专利号	JP1992027185A
国家	日本
文献子类	发明申请
其他题名	Refractive index waveguide type semiconductor laser device
英文摘要	PURPOSE:To obtain a refractive index waveguide type semiconductor laser device prevented from generation of a crystalline defect by locating the boundaries of buried layers of a plurality of kinds on the top part of a second clad layer of a ridge structure. CONSTITUTION:A stripe 5 of an SiO2 film is etched and the width of the stripe 5 of this SiO2 film is processed to a width smaller than the length of the upper side of ridge structure part of a p-clad layer by 300Angstrom on both sides respectively. Then, the block layers 6a, 6b of n - GaAs are made to grow. A t this time, the block layers 6a, 6b are not grown the stripe 5 of the SiO2 film but grow only on the surface of the p-clad layer 4 being etched half, and the block layers 6a,6b grow also on both parts having no stripe 5 of the SiO2 film of the upper side of the ridge structure part of the p-clad layer 4. Later, the stripe 5 of the SiO2 film is removed by a hydro-fluoric acid group solution, and a contact layer of p-GaAs is made to grow on the block layers 6a, 6b and the p-clad layer 4 by an MOCVD method.
公开日期	1992-01-30
申请日期	1990-05-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88625]
专题	半导体激光器专利数据库
作者单位	VICTOR CO OF JAPAN LTD
推荐引用方式 GB/T 7714	TETSU HIDEO. Refractive index waveguide type semiconductor laser device. JP1992027185A. 1992-01-30.

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