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	Semiconductor laser
	YAMAMOTO YUKO
	1992-03-30
著作权人	NEC CORP
专利号	JP1992097582A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To perform the improvement of wire bonding strength and the reduc tion of parasitic capacity and improve modulation properties by covering the window with Cr-Au, and constituting the part, which contacts an insulating film, of a metallic electrode out of transition metal. CONSTITUTION:A guide layer 3, an active layer 4, a clad layer 5, a parallel groove 21, a mesa stripe 22 are formed on an n-InP substrate 1, and excluding the section above the mesa stripe 22, a block layer 6 and 7, and at the whole face, a p-InP layer 8 and a cap layer 9 are formed. Next, a channel part 14 is formed, and an SiO2 film 10 is grown, and a contact part 11, to which a current is let to flow, is gotten. Thereon, a Cu-Au 12 is made to cover the contact part 1 Furthermore, a transition metal 13 and further Ti-Pt-Au 15 are formed on the whole face. Leaving the contact part 11 and the part required form wire bonding, Au is formed thereon, and then it is divided into individual chips by cleavage, whereupon a semiconductor chip is completed.
公开日期	1992-03-30
申请日期	1990-08-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88555]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	YAMAMOTO YUKO. Semiconductor laser. JP1992097582A. 1992-03-30.

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