| Semiconductor laser device | |
| UCHIDA, SATOSHI; KUSUNOKI, KAORU; MUSHIAGE, MASATO | |
| 1993-08-10 | |
| 著作权人 | REEVES BROTHERS INC. |
| 专利号 | US5235609 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device comprises: an active layer; a lower clad layer provided below the active layer; an upper clad layer provided above the active layer; and a current blocking layer, provided above the upper clad layer, for limiting an active region of the active layer in a direction along a width to make the active region of a striped form which has a wide portion and a narrow portion. According to the device, coherence of an oscillated laser beam is reduced, thereby to decrease a feedback induced noise when used for a pickup of an optical information recording/reproducing apparatus. |
| 公开日期 | 1993-08-10 |
| 申请日期 | 1991-10-18 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88488]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | REEVES BROTHERS INC. |
| 推荐引用方式 GB/T 7714 | UCHIDA, SATOSHI,KUSUNOKI, KAORU,MUSHIAGE, MASATO. Semiconductor laser device. US5235609. 1993-08-10. |
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