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	Semiconductor laser element
	YAMAMOTO SABUROU; MURATA KAZUHISA; HAYASHI HIROSHI; TAKENAKA TAKUO
	1982-10-01
著作权人	SHARP KK
专利号	JP1982159084A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To perform a laser oscillation by a low driving current by a method wherein an inner stripe construction, in which an N type active layer, having the prescribed carrier density or above and the film thickness formed in proportion to the length of the hole diffusion based on the non-generation recombination of minor carrier, is provided on a substrate. CONSTITUTION:An N type GaAs current blocking layer, having the carrier density of 3X10cm or above, is provided on a P type GaAs substrate 5 in the thickness of 0.6mum, and a stripe-shape groove 7 of 5mum in width is provided on the current blocking layer. On this groove 7, a Zn-doped P type first clad layer 1, an Si-doped N type active layer 2, a Te-doped N type second clad layer 3, and a Te-doped N type cap layer 4 are successively deposited. A P-side electrode 9 and an N-side electrode 8 are formed for use as an inner stripe semiconductor laser element. Accordingly, a spot type laser oscillation can be performed by applying a driving current of a low threshold value by the help of the stripe construction to be used for current strangulation located in the vicinity of the active layer.
公开日期	1982-10-01
申请日期	1981-03-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88453]
专题	半导体激光器专利数据库
作者单位	SHARP KK
推荐引用方式 GB/T 7714	YAMAMOTO SABUROU,MURATA KAZUHISA,HAYASHI HIROSHI,et al. Semiconductor laser element. JP1982159084A. 1982-10-01.

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