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	Semiconductor laser device
	KAYA, SHUSUKE; NINOMIYA, TAKAO; OKUBO, MICHIO; UCHIYAMA, SEIJI
	2004-09-21
著作权人	FURUKAWA ELECTRIC CO., LTD., THE
专利号	US6795480
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser device
英文摘要	A semiconductor laser device is formed by laminating optical confinement layers and active layers so as to dispose each of said active layers between said optical confinement layers, wherein one of the opposite ends perpendicular to the junction planes of the individual layers in the semiconductor multi-layer film is coated with a low reflection film and the other of the ends is coated with a high reflection film, wherein the low reflection film is an Al2O3 film having a resistivity of 1x10Omega.m or more, preferably 1x10Omega.m or more, and having a stoichiometric ratio composition, which is deposited by, for example, an electron cyclotron resonance sputtering process. The present invention has realized a semiconductor laser device exhibiting a prolonged duration of operating life and having high driving reliability, which is advantageous in that a catastrophic optical damage hardly occurs and a lowering of the optical output after driving at a constant current is suppressed, and thus, it is preferably used as an optical transmitter for the optical communication.
公开日期	2004-09-21
申请日期	2000-09-15
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88449]
专题	半导体激光器专利数据库
作者单位	FURUKAWA ELECTRIC CO., LTD., THE
推荐引用方式 GB/T 7714	KAYA, SHUSUKE,NINOMIYA, TAKAO,OKUBO, MICHIO,et al. Semiconductor laser device. US6795480. 2004-09-21.

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