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	半導体レーザ装置およびその製造方法
	工藤 裕章; 瀧口 治久; 猪口 和彦; 中西 千登勢; 菅原 聰
	1998-07-31
著作权人	シャープ株式会社
专利号	JP2810518B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ装置およびその製造方法
英文摘要	PURPOSE:To obtain a distributed feedback type semiconductor laser device which is small in oscillation threshold current and able to oscillate stably in both a single lateral mode and a single axis mode by a method wherein a diffraction grating is provided to the surface of an optical guide layer formed on an active layer. CONSTITUTION:In a semiconductor laser device, as a current constriction structure where a current is injected is provided only to a stripe groove 15 formed on an N-type GaAs current block layer 9, an active region containing an Al0.13 Ga0.87As active layer 3 is provided under the stripe groove 15, laser rays which are induced there and made to expand vertical to a resonator are trapped by an N-type Al0.5Ga0.5As first clad layer 2 and a P-type Al0.7Ga0.3As second clad layer 6. Laser rays oozing out to a P-type Al0.25Ga0.75As optical guide layer 5 are optically fed back from a diffraction grating 14 corresponding to its ratio to start a continuous laser oscillation. On the other hand, laser rays expanding laterally are absorbed by an N-type GaAs current block layer 9, so that they are trapped as wide as the stripe groove 15.
公开日期	1998-10-15
申请日期	1990-09-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88394]
专题	半导体激光器专利数据库
作者单位	シャープ株式会社
推荐引用方式 GB/T 7714	工藤 裕章,瀧口 治久,猪口 和彦,等. 半導体レーザ装置およびその製造方法. JP2810518B2. 1998-07-31.

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