Semiconductor laser device | |
UNO TOMOAKI; ONOYA JIYUN | |
1988-12-27 | |
著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
专利号 | JP1988318186A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device |
英文摘要 | PURPOSE:To make the spectrum of a semiconductor laser narrower in width by a method wherein a specified one it the gain wavelengths of a semiconductor laser element is selectively and partially fed back and the refractive index is varied so as to control the specified wavelength. CONSTITUTION:A light waveguide array 2 and an output waveguide 8 are formed through diffusing Ti into an LiNbO3 crystal. A diffraction grating 4 is patterned through a dual light beam interference exposure method and formed by means of etching a LiNbO3 dielectric substrate 5 of a Z plate. The oscillating frequency of a semiconductor laser device is controlled by the voltage applied onto an electrode 3, using an electro-optical effect of the LiNbO3 substrate 5. The laser oscillation is generated between a reflecting coating 7 and the diffraction grating 4 and both a single longitudinal mode oscillation and a narrow spectrum width can be obtained at the same time. |
公开日期 | 1988-12-27 |
申请日期 | 1987-06-19 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/88392] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
推荐引用方式 GB/T 7714 | UNO TOMOAKI,ONOYA JIYUN. Semiconductor laser device. JP1988318186A. 1988-12-27. |
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