Manufacture of compound semiconductor crystal layer | |
NISHIKAWA YUKIE; SUGAWARA HIDETO | |
1991-10-04 | |
著作权人 | 株式会社東芝 |
专利号 | JP1991225918A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Manufacture of compound semiconductor crystal layer |
英文摘要 | PURPOSE:To vary resistivity and fabricate semiconductor laser, etc., which utilizes layers for current constriction or photoconductive waves by a method wherein when InGaAlP is grown on a GaAs substrate, Zn is used as impurities, composition of Al is a specific value or larger and a ratio of a mol flow rate of III-group material to a mol flow rate of V-group material (V/III ratio) is a specific value or smaller. CONSTITUTION:Semiconductor laser is structured wherein after an Si-doped In0.5Ga0.15Al0.35Pn clad layer 22, an In0.5Ga0.5P layer active layer 23, a Zn-doped In0.5Ga0.15Al0.35P clad layer 24, a p-In0.5Ga0.5P etching stop layer 25 and a Zn- doped In0.5Ga0.15Al0.35P highly resistant layer 26 are sequentially grown on an n-GaAs substrate 21, a stripe state is formed on the highly resistant layer by means of etching, and then a p-In0.5Ga0.2Al0.3P coating layer 27 and a p-GaAs contact layer 28 are grown. When the highly resistant layer (whose resistivity is 10OMEGA.cm or higher) is to be formed with Zn used as dopant in an In1-x-yGaxAly, a V/III ratio is made 200 or less. In this laser structure, the highly resistant layer constricts current as well as prevents light from oozing out. |
公开日期 | 1991-10-04 |
申请日期 | 1990-01-31 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/88362] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | 株式会社東芝 |
推荐引用方式 GB/T 7714 | NISHIKAWA YUKIE,SUGAWARA HIDETO. Manufacture of compound semiconductor crystal layer. JP1991225918A. 1991-10-04. |
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