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	Semiconductor laser
	KOBAYASHI KENICHI
	1987-08-19
著作权人	NEC CORP
专利号	JP1987189787A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To improve a heat radiation efficiency by a method wherein 1st cladding layer, an active layer, 2nd cladding layer and two- or three-component mixed crystal current blocking layers are formed on a semiconductor substrate in this order and a double-layer structure composed of 3rd cladding layer and a cap layer which are formed upward from the inside of a trench in the current blocking layer by crystal growth is provided. CONSTITUTION:A laser beam emitting part is an active layer 1 above which current blocking layers 4 and 5 do not exist. As 3rd cladding layer 6 exists only on the inside and the upper part of a trench formed in the current blocking layers 4 and 5 and on the part very close to the trench, the radiation path of the heat generated in the laser beam emitting part and its neighborhood consists of 2nd cladding layer 3 and the current blocking layers 4 and 5 and does not include the 3rd cladding layer 6. As the current blocking layers 4 and 5 and a cap layer 7 which constitute the heat radiation path are made of two- or three-component mixed crystal and made of materials with small thermal resistivity, the heat radiation efficiency can be improved and, as the cap layer 7 is contacted with a heatsink by fusion, heat radiation to the sidewise direction can be also increased.
公开日期	1987-08-19
申请日期	1986-02-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88342]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	KOBAYASHI KENICHI. Semiconductor laser. JP1987189787A. 1987-08-19.

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