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	Semiconductor laser element
	MATSUMOTO AKIHIRO; HOSOBANE HIROYUKI; MATSUI KANEKI
	1990-07-12
著作权人	SHARP CORP
专利号	JP1990180084A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To provide a long time and stable operation with high output by forming a 2-layer structure outside a stripe region and a light absorption layer near an active layer of a 2-layer structure, and making the Al mixed crystal ratio of the layer farther from the active layer larger than that of the light absorption layer. CONSTITUTION:Clad layers 17, 19 containing Al near an active layer 18, and a stripe region formed by increasing the thickness of the clad layer 17 are provided, and the outside of the stripe region is formed in a 2-layer structure of a current blocking layer 15 and a second buffer layer 14. With such a structure, the average thermal expansion coefficient outside a V-shaped groove 16 can be made substantially equal to that inside the V-shaped groove 16, thereby alleviating the stress concentration of an active layer 18 near both shoulders of the V-shaped groove 16. The current blocking layer 15 near the active layer 18 is a light absorption layer, and the Al mixed crystal ratio of a second buffer layer farther from the active layer 18 is larger than that of the light absorption layer. Thus, a long time and stable operation can be performed with high output.
公开日期	1990-07-12
申请日期	1988-12-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88333]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	MATSUMOTO AKIHIRO,HOSOBANE HIROYUKI,MATSUI KANEKI. Semiconductor laser element. JP1990180084A. 1990-07-12.

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