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	Semiconductor optical amplification and oscillator
	IMOTO NOBUYUKI; YAMAMOTO YOSHIHISA
	1986-08-04
著作权人	NIPPON TELEGRAPH & TELEPHONE
专利号	JP1986172392A
国家	日本
文献子类	发明申请
其他题名	Semiconductor optical amplification and oscillator
英文摘要	PURPOSE:To conduct optical parametric amplification or oscillation by using a semiconductor laser medium, and to form a small-sized novel amplifier and oscillator having high reliability by shaping constitution in which a crystal orientation capable of generating an optical parametric effect an phase alignment conditions are satisfied. CONSTITUTION:The [110] face of an n-type GaAs substrate is used as a substrate 1 for a semiconductor laser. Consequently, crystal growth layers 2-6 are all shaped in [110] faces, thus excellently generating an optical parametric effect. GaAs, AlAs and Al0.2Ga0.8As having different compositions are superposed and grown as shown in the figure. It is because these crystals belong to the same crystal group and have approximately the same lattice constants. Waveguide layers from five layer waveguides together with the active layer 5, thus satisfying phase alignment conditions. A two-dimensional non-linear type optical constant generating an optical parametric effect has a tensor at three gradations, and the optical parametric effect can be generated effectively by adopting a crystal orientation and a polarizing mode.
公开日期	1986-08-04
申请日期	1985-01-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88327]
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGRAPH & TELEPHONE
推荐引用方式 GB/T 7714	IMOTO NOBUYUKI,YAMAMOTO YOSHIHISA. Semiconductor optical amplification and oscillator. JP1986172392A. 1986-08-04.

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