Quantum cascade laser element
HIRAYAMA, HIDEKI; LIN, TSUNG-TSE
2014-06-25
著作权人RIKEN
专利号EP2747221A1
国家欧洲专利局
文献子类发明申请
其他题名Quantum cascade laser element
英文摘要[PROBLEM] To manufacture a quantum cascade laser (QCL) element having a reduced threshold current density (Jth) and an increased maximum operating temperature (Tmax). [SOLUTION] One embodiment of the present invention provides a THz-QCL element (1000) with a QCL structure (100), which is a semiconductor superlattice (100A) sandwiched between a pair of electrodes (20, 30). The semiconductor superlattice (100A) (QCL structure (100)) is provided with an active region (10) that emits THz range electromagnetic waves due to the transition of electrons between sub-bands during application of a voltage to the pair of electrodes, for example. The active region (10) has repeating unit structures (10U) of a thickness, which includes sets of a well layer (10W) and a barrier layer (10B) alternatingly laminated with each other, wherein the well layer (10W) is made of AlxGa1-xAs (where 0
公开日期2014-06-25
申请日期2012-08-01
状态申请中
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/88309]  
专题半导体激光器专利数据库
作者单位RIKEN
推荐引用方式
GB/T 7714
HIRAYAMA, HIDEKI,LIN, TSUNG-TSE. Quantum cascade laser element. EP2747221A1. 2014-06-25.
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