Semiconductor device | |
DOBSON CHRISTOPHER DAVID | |
1966-08-24 | |
著作权人 | STANDARD TELEPHONES AND CABLES LIMITED |
专利号 | GB1040400A |
国家 | 英国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor device |
英文摘要 | 1,040,400. PN Junction devices. STANDARD TELEPHONES & CABLES Ltd. Nov. 27, 1963, No. 46849/63. Heading H1K. A PN junction device is produced by forming a layer of one conductivity type on a plane face of an insulating or intrinsic semi-conductor substrate, forming a second plane face at an angle to the first and producing a layer of the opposite conductivity type thereon, one face of which forms a PN junction with the edge of the first layer. In the embodiment the substrate is a cylindrical body of intrinsic gallium arsenide and the layers are formed by impurity diffusion or epitaxial deposition. At least the first layer, which is formed on a (100) face of the substrate, is masked during production of the second layer. The second face is produced by cleavage along a (110) plane. Individual elements for use as lasers are divided from the resulting body by cleavage along parallel 110 planes perpendicular to the second face. |
公开日期 | 1966-08-24 |
申请日期 | 1963-11-27 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/88199] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | STANDARD TELEPHONES AND CABLES LIMITED |
推荐引用方式 GB/T 7714 | DOBSON CHRISTOPHER DAVID. Semiconductor device. GB1040400A. 1966-08-24. |
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