Semiconductor laser diode | |
IKUWA YOSHITO; TAKAMIYA SABURO | |
1986-10-02 | |
著作权人 | MITSUBISHI ELECTRIC CORP |
专利号 | JP1986222191A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser diode |
英文摘要 | PURPOSE:To enable laser oscillation having high efficiency by completing the comfinement of beams even on large injection currents by forming optical limiting conductive sections having a conduction type reverse to the conduction type of a photoelectric limiting layer on at least side surfaces in the vicinity of both regions of the photoelectric limiting layer CONSTITUTION:The diode differs from conventional devices only at points where the shape of an opening regions 3 is changed into a U groove shape from a V groove shape in conventional devices and a P-type GaAs section 11 is formed anew and is approximately the same as conventional devices, and the principle of operation thereof is also approximately the same as conventional devices. The novel addition of the P-type GaAs section 11 is the main point of this invention, and the section 11 can compensate the lowering section of the end section of the distribution of injection currents in an active layer 5 when resistivity is made smaller than that of a clad layer 4 in the opening region 3 because the section 11 takes a P-type through the section 11 operates in the same manner as an N-type GaAs layer 2 at the point of the absorption of beams. One part of the section 11 creeping to the flat section of the N-type GaAs layer 2 controls the excess of compensation and reverse heightening of the end of distribution so that the length of the section if made proper and flattened. |
公开日期 | 1986-10-02 |
申请日期 | 1985-03-27 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/88192] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | IKUWA YOSHITO,TAKAMIYA SABURO. Semiconductor laser diode. JP1986222191A. 1986-10-02. |
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