QQ客服 官方微博 反馈留言

	Semiconductor laser diode
	IKUWA YOSHITO; TAKAMIYA SABURO
	1986-10-02
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1986222191A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser diode
英文摘要	PURPOSE:To enable laser oscillation having high efficiency by completing the comfinement of beams even on large injection currents by forming optical limiting conductive sections having a conduction type reverse to the conduction type of a photoelectric limiting layer on at least side surfaces in the vicinity of both regions of the photoelectric limiting layer CONSTITUTION:The diode differs from conventional devices only at points where the shape of an opening regions 3 is changed into a U groove shape from a V groove shape in conventional devices and a P-type GaAs section 11 is formed anew and is approximately the same as conventional devices, and the principle of operation thereof is also approximately the same as conventional devices. The novel addition of the P-type GaAs section 11 is the main point of this invention, and the section 11 can compensate the lowering section of the end section of the distribution of injection currents in an active layer 5 when resistivity is made smaller than that of a clad layer 4 in the opening region 3 because the section 11 takes a P-type through the section 11 operates in the same manner as an N-type GaAs layer 2 at the point of the absorption of beams. One part of the section 11 creeping to the flat section of the N-type GaAs layer 2 controls the excess of compensation and reverse heightening of the end of distribution so that the length of the section if made proper and flattened.
公开日期	1986-10-02
申请日期	1985-03-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88192]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	IKUWA YOSHITO,TAKAMIYA SABURO. Semiconductor laser diode. JP1986222191A. 1986-10-02.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。