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	Semiconductor laser device and method for manufacturing the same
	HASHIMOTO, TAKAHIRO
	2005-03-10
著作权人	SHARP KABUSHIKI KAISHA
专利号	US20050053108A1
国家	美国
文献子类	发明申请
其他题名	Semiconductor laser device and method for manufacturing the same
英文摘要	A semiconductor laser device has a ridge portion composed of a cladding layer and a cap layer laid on top of the cladding layer, and a filling layer formed on opposite lateral sides of the ridge portion. A top surface of the cap layer and a top surface of the filling layer meet at an angle of 135° or larger but not larger than 180° on an upper side of the cap layer. In manufacturing the device, after a filling layer is formed so as to cover the ridge portion, an insulating film is formed and a portion above the ridge portion is selectively removed from the insulating film to expose the filling layer. Then, the exposed filling layer is removed till a top surface of the ridge portion is exposed.
公开日期	2005-03-10
申请日期	2004-09-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88163]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	HASHIMOTO, TAKAHIRO. Semiconductor laser device and method for manufacturing the same. US20050053108A1. 2005-03-10.

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