Semiconductor laser device and method for manufacturing the same | |
HASHIMOTO, TAKAHIRO | |
2005-03-10 | |
著作权人 | SHARP KABUSHIKI KAISHA |
专利号 | US20050053108A1 |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device and method for manufacturing the same |
英文摘要 | A semiconductor laser device has a ridge portion composed of a cladding layer and a cap layer laid on top of the cladding layer, and a filling layer formed on opposite lateral sides of the ridge portion. A top surface of the cap layer and a top surface of the filling layer meet at an angle of 135° or larger but not larger than 180° on an upper side of the cap layer. In manufacturing the device, after a filling layer is formed so as to cover the ridge portion, an insulating film is formed and a portion above the ridge portion is selectively removed from the insulating film to expose the filling layer. Then, the exposed filling layer is removed till a top surface of the ridge portion is exposed. |
公开日期 | 2005-03-10 |
申请日期 | 2004-09-08 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/88163] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP KABUSHIKI KAISHA |
推荐引用方式 GB/T 7714 | HASHIMOTO, TAKAHIRO. Semiconductor laser device and method for manufacturing the same. US20050053108A1. 2005-03-10. |
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