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	Manufacture of semiconductor laser
	HAMADA HIROYOSHI
	1992-02-03
著作权人	三洋電機株式会社
专利号	JP1992030589A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To form an n-type clad layer having sufficient carrier concentration by supplying Se material gas to be epitaxially grown, stopping supply of the Se gas, and then supplying Si material gas to be epitaxially grown. CONSTITUTION:First, Se material gas of a material gas of n-type impurity such as H2Se is supplied about 1 X 10 of molar ratio to group V gas for 10 min, and a first layer 3a is grown about 0.3mum thick. After the layer 3a is grown, the supply of the Se gas is stopped, and the supply of Si material gas is then started. In this case, the Si material gas such as SiH4 is increased from 0 to 8 X 10 of molar ratio to the total sum of group III gas for 20 min, and a second layer 3b is grown about 0.5mum thick. Thus, the carrier concentrations of the first and second layers 3a, 3b are held 5 - 8 X 10cm in its thickness direction.
公开日期	1992-02-03
申请日期	1990-05-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88105]
专题	半导体激光器专利数据库
作者单位	三洋電機株式会社
推荐引用方式 GB/T 7714	HAMADA HIROYOSHI. Manufacture of semiconductor laser. JP1992030589A. 1992-02-03.

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