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	Semiconductor laser device
	NAKAO ICHIRO; YOKOGAWA TOSHIYA
	1986-10-16
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1986231789A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To obtain laser beams which are emitted from a minute region and have different polarization planes whose angles are fixed by a method wherein semiconductor lasers with different polarization planes are integrated on one semiconductor substrate. CONSTITUTION:An inclination is given to an N-type InP substrate 1 by a photoetching process. In this exemplary embodiment, a vertical step is formed. After that, an InP buffer layer 2, an InGaAsP activation layer 3 and a P-type InP cladding layer 4 are formed inparallel to each other by an MOCVD method. Then the formed layers are divided into two lasers 7 and 8 by a photoetching process. As the activation layers of these lasers 7 and 8 are in parallel to the substrate surface, they are provided perpendicular to each other. Therefore, the respective polarization planes of the lasers 7 and 8 meet with each other at right angles. Thus the semiconductor lasers with different respective polarization planes can be integrated on one substrate. With this constitution, the laser beams with different respective polarization planes can be inputted into one polarization maintaining fiber so that the multipolarization plane communication can be realized.
公开日期	1986-10-16
申请日期	1985-04-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87968]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	NAKAO ICHIRO,YOKOGAWA TOSHIYA. Semiconductor laser device. JP1986231789A. 1986-10-16.

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