Optical integrated circuit and manufacture thereof | |
MATSUDA KENICHI; ISHINO MASATO; MATSUI YASUSHI; SHIBATA ATSUSHI | |
1986-10-18 | |
著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
专利号 | JP1986234585A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Optical integrated circuit and manufacture thereof |
英文摘要 | PURPOSE:To enhance the optical coupling efficiency of a semiconductor laser and a lightguide, by providing an uppermost layer and a light guiding layer, which is included in the lightguide, as semiconductor thin films that are formed at the same time, forming an active layer and the light guiding layer on the approximately same plane, and providing the sufficiently broad width for the semiconductor thin film than that of the stripe width of the semiconductor layer. CONSTITUTION:A cap layer 32a and a light guiding layer 32b of a lightguide 33 are simultaneously formed. The cap layer 32a is located on the upper part of an active layer 27. A P-type inverted region 34, in which P-type impurities such as Zn are diffused in a vapor phase, has a stripe broader than the stripe width of the active layer 27. Only the region 34 is contacted with a P-side electrode 35. A light guiding layer 37 does not have a stripe shape like the active layer 27. The layer 37 is formed on the entire surface of a region, where a semiconductor layer 28 is not present. Therefore, a three-dimensional lightguide can be formed at an arbitrary place. The optical coupling efficiency of the lightguide 33 and the semiconductor laser 28 is very high since the active layer 27 of the semiconductor laser 28 and the light guiding layer 32b of the lightguide 33 are located at the approximately same plane. |
公开日期 | 1986-10-18 |
申请日期 | 1985-04-11 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/87960] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
推荐引用方式 GB/T 7714 | MATSUDA KENICHI,ISHINO MASATO,MATSUI YASUSHI,et al. Optical integrated circuit and manufacture thereof. JP1986234585A. 1986-10-18. |
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