Optical integrated circuit and manufacture thereof
MATSUDA KENICHI; ISHINO MASATO; MATSUI YASUSHI; SHIBATA ATSUSHI
1986-10-18
著作权人MATSUSHITA ELECTRIC IND CO LTD
专利号JP1986234585A
国家日本
文献子类发明申请
其他题名Optical integrated circuit and manufacture thereof
英文摘要PURPOSE:To enhance the optical coupling efficiency of a semiconductor laser and a lightguide, by providing an uppermost layer and a light guiding layer, which is included in the lightguide, as semiconductor thin films that are formed at the same time, forming an active layer and the light guiding layer on the approximately same plane, and providing the sufficiently broad width for the semiconductor thin film than that of the stripe width of the semiconductor layer. CONSTITUTION:A cap layer 32a and a light guiding layer 32b of a lightguide 33 are simultaneously formed. The cap layer 32a is located on the upper part of an active layer 27. A P-type inverted region 34, in which P-type impurities such as Zn are diffused in a vapor phase, has a stripe broader than the stripe width of the active layer 27. Only the region 34 is contacted with a P-side electrode 35. A light guiding layer 37 does not have a stripe shape like the active layer 27. The layer 37 is formed on the entire surface of a region, where a semiconductor layer 28 is not present. Therefore, a three-dimensional lightguide can be formed at an arbitrary place. The optical coupling efficiency of the lightguide 33 and the semiconductor laser 28 is very high since the active layer 27 of the semiconductor laser 28 and the light guiding layer 32b of the lightguide 33 are located at the approximately same plane.
公开日期1986-10-18
申请日期1985-04-11
状态失效
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/87960]  
专题半导体激光器专利数据库
作者单位MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式
GB/T 7714
MATSUDA KENICHI,ISHINO MASATO,MATSUI YASUSHI,et al. Optical integrated circuit and manufacture thereof. JP1986234585A. 1986-10-18.
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