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	Multi-level integrated photonic devices
	BEHFAR, ALEX A.; GREEN, MALCOLM R.; SCHREMER, ALFRED T.
	2010-04-15
著作权人	MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
专利号	US20100091810A1
国家	美国
文献子类	发明申请
其他题名	Multi-level integrated photonic devices
英文摘要	A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.
公开日期	2010-04-15
申请日期	2009-12-17
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87915]
专题	半导体激光器专利数据库
作者单位	MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
推荐引用方式 GB/T 7714	BEHFAR, ALEX A.,GREEN, MALCOLM R.,SCHREMER, ALFRED T.. Multi-level integrated photonic devices. US20100091810A1. 2010-04-15.

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