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	半導体レーザの製造方法
	瀧口 治久; 中津 弘志; 猪口 和彦; 厚主 文弘; 坂根 千登勢; 奥村 敏之; 菅原 聰
	1996-08-22
著作权人	シャープ株式会社
专利号	JP2554192B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザの製造方法
英文摘要	PURPOSE:To enable a narrow active layer to be formed excellent in reproducibility and a buried layer to be grown by a method wherein an AlGaAs layer is laminated on a GaAs substrate, an etching process is carried out, and a selective growth is performed through an MOCVD method. CONSTITUTION:A second conductivity type or a semi-insulating (resistivity: 1X10OMEGAcm) AlxGa1-xAs ((AlxGa1-x)0.47In0.53As conformable to InP in lattice) is laminated on a first conductivity type GaAs (InP) substrate provided with a 100 plane. A channel is provided in a direction to a laminated substrate so as to reach to the substrate through etching, and a double hetero-structure composed of a first conductivity type AlGaAs (InP) clad layer, an AlGaAs (GaxIn1-xPyAs1-y, x=0.47(1-y)) active layer, an a second conductivity type AlGaAs (InP) clad layer is made to grow selectively on the substrate at the base of the channel, where the grown hetero-structure whose side face is surrounded by a 111 plane is triangular or trapezoidal in cross section. Furthermore, an AlGaAs (InP) semi-insulating layer, a PN reverse bias multilayer, or a second conductivity type AlGaAs (InP) layer is made to grow on the outer region of the hetero-structure concerned as buried.
公开日期	1996-11-13
申请日期	1990-06-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87911]
专题	半导体激光器专利数据库
作者单位	シャープ株式会社
推荐引用方式 GB/T 7714	瀧口 治久,中津 弘志,猪口 和彦,等. 半導体レーザの製造方法. JP2554192B2. 1996-08-22.

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