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	Distribution feedback semiconductor laser device
	SUGAWARA SATOSHI; TAKIGUCHI HARUHISA; NAKANISHI CHITOSE; KUDO HIROAKI
	1991-12-18
著作权人	SHARP CORP
专利号	JP1991288489A
国家	日本
文献子类	发明申请
其他题名	Distribution feedback semiconductor laser device
英文摘要	PURPOSE:To acquire a distribution feedback semiconductor laser device of good element characteristics at high yield by providing an optical guide layer which consists of a stripe-like growth layer whose cross sectional contour is triangular in a number of stripe-like grooves parallel on a substrate and by forming a diffraction grating on a slant of the guide layer by etching. CONSTITUTION:An SiO2 film is deposited on a substrate 1, a stripe-like groove is formed, and an SiO2 mask 12 is formed. Then, an Se doped n-GaAs buffer layer 2, an Se doped n-Al0.5Ga0.5As clad layer 3, a nondoped Al0.13Ga0.08As active layer 4 and a Zn doped p-Al0.5Ga0.5As clad layer 5 are formed successively on the inside of the groove by MOCVD method. After a diffraction grating pattern is formed by electron beam exposure on the second resist layer 14 formed on the tripe-like growth layer, a first resist layer 13 is etched by oxygen plasma etching and a diffraction grating pattern is formed on a slant of an optical guide layer 6. Thereafter, a diffraction grating is formed on the optical guide layer 6 by ion beam etching.
公开日期	1991-12-18
申请日期	1990-04-04
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87889]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	SUGAWARA SATOSHI,TAKIGUCHI HARUHISA,NAKANISHI CHITOSE,et al. Distribution feedback semiconductor laser device. JP1991288489A. 1991-12-18.

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