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	Method of forming hetero-epitaxial struc- ture and device manufactured by the same
	RARUFU ANDORE ROOGAN; TAUII TAABANNEKU; HENRITSUKU TEMUKIN
	1991-05-17
著作权人	AMERIKAN TEREFUON ANDO TEREGURAFU CO
专利号	JP1991116796A
国家	日本
文献子类	发明申请
其他题名	Method of forming hetero-epitaxial struc- ture and device manufactured by the same
英文摘要	PURPOSE: To improve a crystal completion degree near a boundary and to reduce the threshold current of a quantum well laser by providing a process for forming the binary system layer of the group III-V semiconductor material of the monomolecular layer thickness of at least one layer and less than ten layers on a substrate so as to make at least one kind of components be common to a first layer and a second layer. CONSTITUTION: A hetero structure body 100 is provided with the layer 40 on one side and a quantum well produced by the difference of a band gap between the layer 30 and 50 on the other side in the area of the layer 40. The composition of the layers 30, 40 and 50 is group III-V semiconductor, preferably a (In, Ga) (As, P) material system. After the growth of the layer 30 and before the growth of the layer 40, a clad layer 35 is grown on the layer 30. The thickness of the layer 35 is at least one and less than ten atomic planes preferably. The layer 35 is constituted of a binary system group III-V semiconductor material, InP preferably.
公开日期	1991-05-17
申请日期	1990-06-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87818]
专题	半导体激光器专利数据库
作者单位	AMERIKAN TEREFUON ANDO TEREGURAFU CO
推荐引用方式 GB/T 7714	RARUFU ANDORE ROOGAN,TAUII TAABANNEKU,HENRITSUKU TEMUKIN. Method of forming hetero-epitaxial struc- ture and device manufactured by the same. JP1991116796A. 1991-05-17.

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