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	Surface emission semiconductor laser element
	KONDO MASAFUMI; HAYAKAWA TOSHIRO; SUYAMA NAOHIRO; TAKAHASHI HISATOSHI
	1989-04-26
著作权人	SHARP CORP
专利号	JP1989108789A
国家	日本
文献子类	发明申请
其他题名	Surface emission semiconductor laser element
英文摘要	PURPOSE:To obtain high gain properties by composing a surface emission semiconductor laser element of a GaAs semiconductor substrate having a face azimuth 111 and an active layer having superlattice or quantum well structure formed onto a substrate and consisting of GaAs and AlGaAs. CONSTITUTION:A P-type GaAs buffer layer 2, a P-type Al0.7Ga0.3As clad layer 3, a multiple quantum well active layer 4 in which undoped GaAs quantum well layers and undoped Al0.2Ga0.8As barrier layers are superposed alternately in 200 layers and 199 layers, an N-type Al0.7 Ca0.3As clad layer 5 and an N-type GaAs contact layer 6 are grown continuously on a P-type GaAs substrate 1 having a face orientation 111 by using an MBE method. An SiN film 7 is shaped onto the contact layer 6, and an Zn diffusion layer 8 is formed up to the clad layer 3. The central section of the GaAs substrate is etched until the clad layer 3 is exposed, and a resonator is formed, reflecting mirrors 9, 10 functioning as electrodes in combination are shaped, and the whole is divided into chips. Positive voltage is applied to the electrode 10 for the chip and negative voltage to the electrode 9, and laser beams are extracted from the electrode 10 side. Accordingly, room-temperature continuous oscillation is enabled by low threshold currents.
公开日期	1989-04-26
申请日期	1987-10-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87792]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	KONDO MASAFUMI,HAYAKAWA TOSHIRO,SUYAMA NAOHIRO,et al. Surface emission semiconductor laser element. JP1989108789A. 1989-04-26.

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