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	Manufacture of semiconductor laser
	JINDOU MASAAKI
	1986-03-04
著作权人	NEC CORP
专利号	JP1986044484A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To obtain the titled device of buried type with high yield and good mass productivity by a method wherein a DH structural crystal is formed at a time of vapor phase growth and etched into grooves penetrating through the active layer, and a current block layer is provided in the part other than the mesa top; thereafter, a connection layer is epitaxially grown in vapor phase over the whole surface. CONSTITUTION:An N-Al0.4Ga0.6As 2, an N-Al0.3Ga0.7As 3, a GaAs active layer 4, a P-Al0.4Ga0.6As 5, and a P-GaAs 5 are laminated on an N-GaAs substrate 1 by MOCVD. The grooves 11 penetrating through the active layer 4 are etched by using an SiO2 12 and a photo resist 15 as a mask. After a high-resistant Al0.4Ga0.6As current block layer 7 is formed by removing the mask 13, electrodes 9 and 10 are attached to the flat surface by removal of the mask 12 and thick formation of a P-GaAs 8. This construction strengthens the refractive index guide of the lateral mode of laser beams and yields stable basic lateral mode oscillation, having good efficiency with low oscillation threshold values because of the structure of effective current stricture of small astigmatism. Besides, this device can be manufactured with high yield by adoption of MOCVD and easy control of etching.
公开日期	1986-03-04
申请日期	1984-08-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87769]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	JINDOU MASAAKI. Manufacture of semiconductor laser. JP1986044484A. 1986-03-04.

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