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	Semiconductor laser
	OOSHIMA MASAAKI; TAKENAKA NAOKI; HIRAYAMA NORIYUKI; KINO YUKIHIRO
	1985-08-22
著作权人	MATSUSHITA DENKI SANGYO KK
专利号	JP1985160682A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To stabilize a longitudinal mode by structure having no corrugation by forming a groove in the direction of a (100) InP substrate, shaping a growth layer, forming a groove in the direction and burying double hetero-structure of InP/InGaAsP/InP into the groove. CONSTITUTION:A U-shaped groove is formed in the direction on a (100) substrate 1 in a striped manner, and a p-InP layer 2, an n-InP layer 3 and an n-InGaAsP (Eg-0.95eV) layer 4 are shaped on the groove in succession. A V groove is further formed in the direction in the striped manner, and an n-InP clad layer 6, an n-InGaAsP active layer 7, a p-InP clad layer 8 and p-InGaAsp cap layer 9 are further shaped on a wafer with such orthogonal grooves. One part of the n-InGaAsP active layer 4 is disconnected by the InP layers 2, 3 in a semiconductor laser having such an oscillating wavelength of 3mum, and gains are distributed selectively in a laser resonator by the reflection and interference effects of oscillating beams, thus easily stabilizing a longitudinal mode.
公开日期	1985-08-22
申请日期	1984-01-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87610]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA DENKI SANGYO KK
推荐引用方式 GB/T 7714	OOSHIMA MASAAKI,TAKENAKA NAOKI,HIRAYAMA NORIYUKI,et al. Semiconductor laser. JP1985160682A. 1985-08-22.

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