半導体発光装置の製造方法 | |
中嶋 一雄; 楠木 敏弘 | |
1994-10-12 | |
著作权人 | FUJITSU LTD |
专利号 | JP1994080861B2 |
国家 | 日本 |
文献子类 | 授权发明 |
其他题名 | 半導体発光装置の製造方法 |
英文摘要 | PURPOSE:To reduce a threshold value current of a semiconductor light emitting device by laminating an active layer to become a III-V Group mixed crystal light emitting region including In and an InP crystal layer or a mixed crystal layer including In and P, etching to form a stripelike inverted mesa shape, and then shaping the side with mixture solution of HBr, H2O2, H2O. CONSTITUTION:An N-type In buffer layer 2, an InGaAsP active layer 3, a P-type InP clad layer 4 and a P-type InGaAsP cap layer 12 are laminated and liquid epitaxially grown on an N-type InP substrate 1, covered with a mask 11, and etched with brome methanol to expose the side of the layer 3 to form a light emitting unit 5. Since the side is (111)A face, the mask 11 remains as it is, the lower portion of the unit 5 is slightly etched with a mixture solution of HBr, H2O2 and H2O to varnish the (111)A surface to form a substantially perpendicular light emitting unit 5b, thereby completing a light emitting unit. Then, current blocking layers 6, 7, an insulating layer 8, and electrodes 9, 10 are formed and cleaved in an ordinary manner. |
公开日期 | 1994-10-12 |
申请日期 | 1986-01-17 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/87579] |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU LTD |
推荐引用方式 GB/T 7714 | 中嶋 一雄,楠木 敏弘. 半導体発光装置の製造方法. JP1994080861B2. 1994-10-12. |
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