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	SAKAI KAZUO; MATSUSHIMA JUICHI; AKIBA SHIGEYUKI; UKO KATSUYUKI
	1988-10-20
著作权人	KOKUSAI DENSHIN DENWA CO LTD
专利号	JP1988052792B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To perform the increase in the light confining coefficient while preventing the leakage of carrier by laminating a plurality of semiconductor layers having different forbidden band width at both sides of an active layer and 0.03mum or less of thickness. CONSTITUTION:A photowaveguide layer 22 in which many N type InP clad layer 21, and N type InP and N type InGaAsP [lambdag (wavelength corresponding to forbidden band width)=55mum] having 0.03mum or less of thickness are alternately laminated, a non-doped InGaAsP active layer 23 having lambdag=55mum, a photowaveguide layer 24 having a P type InP in which 0.33mum or less of thickness and P type InGaAsP (lambdag=55mum) are alternately laminated, a P type InP clad layer 25, and a P type InGaAsP layer 26 ar sequentially laminated. In this structure, since the layer which is contact directly with the layer 23 is InP, the value of the energy barrier observed from the active layer is increased more.
公开日期	1988-10-20
申请日期	1982-12-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87497]
专题	半导体激光器专利数据库
作者单位	KOKUSAI DENSHIN DENWA CO LTD
推荐引用方式 GB/T 7714	SAKAI KAZUO,MATSUSHIMA JUICHI,AKIBA SHIGEYUKI,et al. -. JP1988052792B2. 1988-10-20.

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