QQ客服 官方微博 反馈留言

	-
	HIUGA SUSUMU
	1990-02-08
著作权人	KOGYO GIJUTSUIN
专利号	JP1990006239B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To set the transverse mode of a semiconductor laser into a zero-order mode and to make its far field pattern into a single peak type by a method wherein the photo absorption layer in the lower direction of the face of the P-N junction having a plural light-emitting regions is provided with a distribution in its thickness in such a way as to have a distribution in its photo absorption factor in the lower direction of the P-N junction face. CONSTITUTION:An etching is performed on a blocking layer 5a between stripes 7 to provide a groove, the loss in this groove part is sufficiently lessened and the zero-order and primary transverse modes are made easy to be excited in the same degree. Moreover, as the distance between an active layer 3 and blocking layers 5 are close at the outside of the two-strip stripes 7, light is absorbed and the loss is large, the primary transverse mode having a large electric field strength is large in loss as a whole in the outside parts and becomes hardly to be excited. By this way, the zero-order transverse mode only can be excited, thereby enabling to obtain a good-quality laser beam, whose far field pattern is a single peak type and coupling property with fibers is good.
公开日期	1990-02-08
申请日期	1984-12-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87465]
专题	半导体激光器专利数据库
作者单位	KOGYO GIJUTSUIN
推荐引用方式 GB/T 7714	HIUGA SUSUMU. -. JP1990006239B2. 1990-02-08.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。