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	Manufacture of semiconductor laser resonator
	KOBAYASHI KENICHI
	1986-11-26
著作权人	NEC CORP
专利号	JP1986267388A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser resonator
英文摘要	PURPOSE:To improve mass productivity by forming semiconductor multilayer films which control reflectance before a semiconductor laser wafer is divided into bars. CONSTITUTION:Stripe patterns made of SiO2 are formed as etching-resistant films 2 on a double hetero structure semiconductor wafer 1 whose activation layer 10 is made of InGaAsP and cladding layer 20 is made of InP. The wafer 1 is then inserted into a reaction tube and etched with a mixture gas of hydrochloric acid with H2. The supply of the etching gas is discontinued and a mixture gas of AsH3 with PH3 is supplied and then a mixture of trimethyl indium (TMI) and PH3 and a mixture of TMI, trimethyl gallium, PH3 and AsH3 are alternately introduced to make high-resistance multilayer films 100 on the sides of steps. After that, electrodes are formed and the wafer 1 is cut into elements by cleaving, so that semiconductor lasers can be obtained.
公开日期	1986-11-26
申请日期	1985-05-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87427]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	KOBAYASHI KENICHI. Manufacture of semiconductor laser resonator. JP1986267388A. 1986-11-26.

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