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	Semiconductor light emitting device
	SHIMA KATSUTO
	1984-05-08
著作权人	FUJITSU LTD
专利号	JP1984079591A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light emitting device
英文摘要	PURPOSE:To improve the stability of axle mode and to increase the optical output of the titled device by a method wherein two semiconductor layers of the same conductivity type are alternately laminated to meet the specific requirements for forbidden band width, refractive index and thickness of these two semiconductor layers. CONSTITUTION:An N type GaAlAs clad layer 2 and an N type GaAs active layer 3 are alternately laminated on an N type GaAs substrate A P type region 4 is formed by means of diffusing impurity on this laminated construction. In such a construction of a semiconductor light emitting device, assuming forbidden band width, refractive index, thickness of the layer 3 respectively to be Ea, na, da while those of the layer 2 respectively to be Ec, nc, dc, the following expression shall be satisfied i.e. Eanc. On the other hand, assuming the wavelength of emitted light in vacuum, the effective refractive index of the semiconductor laminted construction respectively to be lambdao, ne, the relation of positive integer shall nearly satisfy the following expression, i.e. da+dc=lXlambdao/2ne. When these expressions are satisfied, the stability of axle mode of surface emitting laser may be improved further expanding the light emitting area and increasing the optical output.
公开日期	1984-05-08
申请日期	1982-10-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87405]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	SHIMA KATSUTO. Semiconductor light emitting device. JP1984079591A. 1984-05-08.

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