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	Mask for selective formation of thin film
	KOMATSU HIROSHI
	1989-08-29
著作权人	SEIKO EPSON CORP
专利号	JP1989215089A
国家	日本
文献子类	发明申请
其他题名	Mask for selective formation of thin film
英文摘要	PURPOSE:To enable self alignment to be performed and to improve both reproducibility and productivity, by a structure wherein a constitutive material is made to include an amorphous material in order to form a mask for selectively forming thin film which is used to selectively form a II-VI compound semiconductor thin film on a semiconductor substrate. CONSTITUTION:A semiconductor substrate having a DH structure is prepared in which a N type clad layer 102, an active layer 103, a P type clad layer 104 and a P type contact layer 105 are in this order formed on an N type GaAs substrate 10 Subsequently, an amorphous SiO2 thin film of about 3000Angstrom in thickness is deposited to the surface of the semiconductor substrate by means of a thermal CVD method. This SiO2 thin film is etched in a stripe shape through a photolithography process to form a SiO2 mask 106. Next, the DH structure is etched through the contact layer 105 to the upper section of the P type clad layer 104 by means of a sulfate etchant, using the SiO2 mask 106 as a protective layer for the etching. At this time, a rib 107 is formed in a reverse mesa shape only under the SiO2 mask 106. Thereafter, a ZnSe thin film layer 105 is so epitaxially grown on the surface of the DH structure as to bury the rid 107 therein by using the SiO2 mask 106 as a mask for selectively forming thin film.
公开日期	1989-08-29
申请日期	1988-02-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87364]
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	KOMATSU HIROSHI. Mask for selective formation of thin film. JP1989215089A. 1989-08-29.

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