QQ客服 官方微博 反馈留言

	Manufacture of buried hetero semiconductor laser
	KAWANO HIDEO
	1987-04-25
著作权人	NEC CORP
专利号	JP1987090993A
国家	日本
文献子类	发明申请
其他题名	Manufacture of buried hetero semiconductor laser
英文摘要	PURPOSE:To form a high efficiency and high reliability hetero semiconductor laser having low oscillation threshold value with good reproducibility by liquid- phase epitaxially growing the first and second buried semiconductor layers with specific temperature oversaturation solution. CONSTITUTION:A photowaveguide layer 3, an active layer 5, an intermediate layer 5, a clad layer 6, and an electrode layer 7 are sequentially formed. Thereafter, a mesa is formed in a stripe shape to arrive at the substrate Then, only the layer 5 is selectively etched from the side. The layer 3 is lightly etched to form a neck 9. Then, a current blocking layer 10 is grown at 781 deg.C of growing temperature, 4+ or -1 deg.C of oversaturation with growing solution of 3mm of thickness to enclose the mesa. Then, a layer 11 is grown at 780 deg.C of growing temperature at 7+ or -1 deg.C of oversaturation with growing solution of 6mm thick. Then, the current blocking layer 10 is formed at low growing velocity in the thicknesswise direction with small rise from the lower surface of the neck, and the layer 11 is uniformly buried and grown without improper growth over the entire mesa side.
公开日期	1987-04-25
申请日期	1985-10-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87266]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	KAWANO HIDEO. Manufacture of buried hetero semiconductor laser. JP1987090993A. 1987-04-25.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。