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	Current blocking structure to improve semiconductor laser performance
	CHAN, YUEN CHUEN; ONG, TEIK KOOI; LAM, YEE LOY
	2003-05-08
著作权人	DENSELIGHT SEMICONDUCTOR PTE LTD.
专利号	US20030086462A1
国家	美国
文献子类	发明申请
其他题名	Current blocking structure to improve semiconductor laser performance
英文摘要	The layer structure of a DC-PBH laser diode consists of an n-InP substrate (51), an n-InP buffer layer (52), an undoped-InGaAsP active layer (53), a p-Inp cladding layer (54), a p-InP current blocking layer (55), an n-InP current blocking layer (56), a p-InP cladding layer (57), and a p-InGaAsP contact layer (58). An additional layer of Fe-doped InP layer (55a) creates an acceptor level (Fe3+/Fe2+) near mid-band gap. The iron impurities are deep level traps, and will make the capacitance C2 less dependent of the impurity concentration of layer (56) which is normally doped with a concentration larger than 1x1018 cm-3 to lower the leakage current from p-InP blocking layer (57) to p-InP blocking layer (55) that does not contribute to light emission. The capacitance C2 and hence the overall capacitance Cp-n-p-n will be reduced with this Fe doped InP layer (55a) and consequently the displacement current through the current blocking structure during high speed operation will be lowered. In addition, as this Fe-doped InP layer is also a thermally stable semi-insulating material, a high resistivity layer is thus formed between the n-InP blocking layer (56) and P-InP blocking layer (55). Thus, this Fe doped InP layer (55a) will also effectively reduce the leakage current flowing through the p-n-p-n current blocking channel as mentioned above.
公开日期	2003-05-08
申请日期	2002-11-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87152]
专题	半导体激光器专利数据库
作者单位	DENSELIGHT SEMICONDUCTOR PTE LTD.
推荐引用方式 GB/T 7714	CHAN, YUEN CHUEN,ONG, TEIK KOOI,LAM, YEE LOY. Current blocking structure to improve semiconductor laser performance. US20030086462A1. 2003-05-08.

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