| Quantum dot lasers | |
| STINTZ, ANDREAS; VARANGIS, PETROS, N.; MALLOY, KEVIN, J.; LESTER, LUKE, F.; NEWELL, TIMOTHY, C.; LI, HUA | |
| 2002-07-25 | |
| 著作权人 | SCIENCE & TECHNOLOGY CORPORATION @ UNM |
| 专利号 | WO2002058200A2 |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Quantum dot lasers |
| 英文摘要 | A quantum dot active region is disclosed in which quantum dot layers are formed using a self-assembled growth technique. In one embodiment, growth parameters are selected to control the dot density and dot size distribution to achieve desired optical gain spectrum characteristics. In one embodiment, the distribution in dot size and the sequence of optical transition energy values associated with the quantum confined states of the dots are selected to facilitate forming a continuous optical gain spectrum over an extended wavelength range. In another embodiment, the optical gain is selected to increase the saturated ground state gain for wavelengths of 1260 nanometers and greater. In other embodiments, the quantum dots are used as the active region in laser devices, including tunable lasers and monolithic multi-wavelength laser arrays. |
| 公开日期 | 2002-07-25 |
| 申请日期 | 2001-10-05 |
| 状态 | 未确认 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87147]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SCIENCE & TECHNOLOGY CORPORATION @ UNM |
| 推荐引用方式 GB/T 7714 | STINTZ, ANDREAS,VARANGIS, PETROS, N.,MALLOY, KEVIN, J.,et al. Quantum dot lasers. WO2002058200A2. 2002-07-25. |
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