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	Semiconductor device
	YOKOGAWA TOSHIYA; OGURA MOTOTSUGU
	1988-05-30
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1988126288A
国家	日本
文献子类	发明申请
其他题名	Semiconductor device
英文摘要	PURPOSE:To form a single crystal epitaxial film of high quality on an Si substrate, by forming a distorted superlattice layer composed of two or more kinds of II-VI compound semiconductor on a semiconductor substrate having a part covered with an insulative film and an exposed part. CONSTITUTION:An SiO2 thermal oxidation film 2 is formed on an Si substrate 1 by thermal oxidation method, and a striped pattern is formed by a photoetching method. Sequential epitaxial growth is performed by MOVPE method under the following conditions: substrate temperature 400 deg.C, flow rate of H2 of DMZ=2.5cc/min, flow rate of H of DMS=9cc/min, tatal flow rate=4 l/min, and reduced pressure 100 torr. A distorted superlattice layer 3 of ZnS and ZnS0.9Se0.1 are stacked on the substrate 1, and thereon the following are stacked in order: a clad layer 4 of a ZnS single crystal thin film, a light guide layer 5 of ZnS0.5Se0.5 single crystal thin film, and the clad layer 4 of ZnS single crystal thin film.
公开日期	1988-05-30
申请日期	1986-11-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87123]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	YOKOGAWA TOSHIYA,OGURA MOTOTSUGU. Semiconductor device. JP1988126288A. 1988-05-30.

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