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	Manufacture of semiconductor laser
	UCHIDA MAMORU
	1985-10-08
著作权人	NIPPON DENKI KK
专利号	JP1985198882A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To obtain a highly reliable and high-output semiconductor laser by a method wherein a clad layer, an active layer, a second-conductive type clad layer and a prescribed semiconductor layer are made to epitaxially grow in liquid-phase in order on a first-conductive type semiconductor crystal substrate and a prescribed processing is performed. CONSTITUTION:An n type Al0.35Ga0.65As clad layer (doped with Sn) 22, a GaAs active layer 23, a p type Al0.35Ga0.65As clad layer (doped with Ge) 24 and an n type GaAs blocking layer 25 are laminated in order on an n type GaAs substrate 21 with a (100) plane by a liquid-phase epitaxial growth method. A groove is formed in the blocking layer 25 by a photolisographic technique and a chemical etching technique. The p type Al0.35Ga0.65As layer 24 is made to expose in the groove part alone by bringing GaAs-Ga fused liquid, unsaturated amount of which has been controlled, into contact with the grown substrate using a liquid- phase epitaxial method. A p type Al0.35Ga0.65As clad layer (doped with Ge) 26 and a p type GaAs cap layer 27 are laminated, and a p type electrode 28 and an n type electrode 29 are deposited. As a result, a highly reliable and high-output semiconductor laser can be obtained.
公开日期	1985-10-08
申请日期	1984-03-23
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87055]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	UCHIDA MAMORU. Manufacture of semiconductor laser. JP1985198882A. 1985-10-08.

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