Manufacture of semiconductor laser | |
UCHIDA MAMORU | |
1985-10-08 | |
著作权人 | NIPPON DENKI KK |
专利号 | JP1985198882A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Manufacture of semiconductor laser |
英文摘要 | PURPOSE:To obtain a highly reliable and high-output semiconductor laser by a method wherein a clad layer, an active layer, a second-conductive type clad layer and a prescribed semiconductor layer are made to epitaxially grow in liquid-phase in order on a first-conductive type semiconductor crystal substrate and a prescribed processing is performed. CONSTITUTION:An n type Al0.35Ga0.65As clad layer (doped with Sn) 22, a GaAs active layer 23, a p type Al0.35Ga0.65As clad layer (doped with Ge) 24 and an n type GaAs blocking layer 25 are laminated in order on an n type GaAs substrate 21 with a (100) plane by a liquid-phase epitaxial growth method. A groove is formed in the blocking layer 25 by a photolisographic technique and a chemical etching technique. The p type Al0.35Ga0.65As layer 24 is made to expose in the groove part alone by bringing GaAs-Ga fused liquid, unsaturated amount of which has been controlled, into contact with the grown substrate using a liquid- phase epitaxial method. A p type Al0.35Ga0.65As clad layer (doped with Ge) 26 and a p type GaAs cap layer 27 are laminated, and a p type electrode 28 and an n type electrode 29 are deposited. As a result, a highly reliable and high-output semiconductor laser can be obtained. |
公开日期 | 1985-10-08 |
申请日期 | 1984-03-23 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/87055] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NIPPON DENKI KK |
推荐引用方式 GB/T 7714 | UCHIDA MAMORU. Manufacture of semiconductor laser. JP1985198882A. 1985-10-08. |
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